Download Advances in Solid State Physics by Prof. Dr. Rolf Haug (auth.) PDF

By Prof. Dr. Rolf Haug (auth.)

The current quantity forty six of Advances in reliable country Physics includes the written models of chosen invited lectures from the spring assembly of the Arbeitskreis Festkörperphysik of the Deutsche Physikalische Gesellschaft which used to be held from 27 to 31 March 2006 in Dresden, Germany. Many topical talks given on the a variety of symposia are incorporated. almost all these have been prepared collaboratively by way of a number of of the divisions of the Arbeitskreis. The topis variety from zero-dimensional physics in quantum dots, molecules and nanoparticles over one-dimensional physics in nanowires and 1d structures to extra utilized matters like optoelectronics and fabrics technology in skinny movies. The contributions span the total width of solid-state physics from really easy technological know-how to applications.

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F. Frost, G. A. C. Jones, D. G. Hasko, Phys. Rev. Lett. 70, 1311–1314 (1993) [17] J. M. Elzerman, R. Hanson, L. H. Willems van Beveren, B. Witkamp, L. M. K. Vandersypen, L. P. Kouwenhoven, Nature (London) 430, 431–435 (2004) [18] J. R. Petta, A. C. Johnson, J. M. Taylor, E. A. Laird, A. Yacoby, M. D. Lukin, C. M. Marcus, M. P. Hanson, A. C. Gossard, Science 309, 2180–2184 (2005) [19] R. Schleser, E. Ruh, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard, Appl. Phys. Lett. 85, 2005–2007 (2004) [20] L.

M. Taylor, E. A. Laird, A. Yacoby, M. D. Lukin, C. M. Marcus, M. P. Hanson, A. C. Gossard, Science 309, 2180 (2005). -A. Engel and D. Loss, Science 309, 586 (2005). [12] C. W. Beenakker, D. P. Diqvincenzo, C. Emary, M. Kindermann, Phys. Rev. Lett. 93, 020501 (2004). [13] V. N. Golovach, A. V. Khaetskii, D. Loss, Phys. Rev. Lett. 93, 016601 (2004). [14] J. M. Elzerman, R. Hanson, L. H. Willems van Beveren, B. Witkamp, L. M. K. Vandersypen, L. P. Kouwenhoven, Nature 430, 431 (2004). [15] M. Kroutvar, Y.

C. Johnson, J. M. Taylor, E. A. Laird, A. Yacoby, M. D. Lukin, C. M. Marcus, M. P. Hanson, A. C. Gossard, Science 309, 2180–2184 (2005) [19] R. Schleser, E. Ruh, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard, Appl. Phys. Lett. 85, 2005–2007 (2004) [20] L. M. K. Vandersypen, J. M. Elzerman, R. N. Schouten, L. H. Willems van Beveren, R. Hanson, L. P. Kouwenhoven, Appl. Phys. Lett. 85, 4394–4396 (2004) [21] D. A. Bagrets, Y. V. Nazarov, Phys. Rev. B 67, 085316 (2003) [22] S. Gustavsson, R. Leturcq, B.

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